可见光通信中GaN-LED PN结面积对调制带宽的影响机理

周政; 缪文南; 李亚; 龙晓燕; 李健

doi:10.37188/OPE.20202807.1494

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可见光通信中GaN-LED PN结面积对调制带宽的影响机理

现代应用光学 | 更新时间：2020-08-13

- 可见光通信中GaN-LED PN结面积对调制带宽的影响机理
- Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication
- 光学精密工程 2020年28卷第7期页码：1494-1499
- 作者机构：
  
  1.华南理工大学广州学院电子信息工程学院, 广东广州 510800
  2.中山大学电子信息与工程学院, 广东广州 510275
- 作者简介：
  
  [ "周政(1979-), 女, 湖南益阳人, 博士, 副教授, 2006年于华南师范大学获得硕士学位, 2018年于中山大学获得博士学位, 主要从事LED研制, LED在可见光通信中的应用等方面的研究。E-mail:zhouzheng@gcu.edu.cn" ]
- 基金信息：
  
  广东省重点基金资助项目(2019B010132002);广东省自然科学基金资助项目(2017A030310465);广东省创新强校工程资助项目(2018KTSCX327)
- DOI：10.37188/OPE.20202807.1494
  中图分类号： TN510.50;O140.3099
- 收稿日期：2019-12-16，
  
  修回日期：2020-01-13，
  
  录用日期：2020-1-13，
  
  纸质出版日期：2020-07-15
- 稿件说明：
移动端阅览
周政, 缪文南, 李亚, 等. 可见光通信中GaN-LED PN结面积对调制带宽的影响机理[J]. 光学精密工程, 2020,28(7):1494-1499.

Zheng ZHOU, Wen-nan MIAO, Ya LI, et al. Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication[J]. Optics and precision engineering, 2020, 28(7): 1494-1499.
周政, 缪文南, 李亚, 等. 可见光通信中GaN-LED PN结面积对调制带宽的影响机理[J]. 光学精密工程, 2020,28(7):1494-1499. DOI： 10.37188/OPE.20202807.1494.

Zheng ZHOU, Wen-nan MIAO, Ya LI, et al. Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication[J]. Optics and precision engineering, 2020, 28(7): 1494-1499. DOI： 10.37188/OPE.20202807.1494.

摘要

在可见光无线通信中，用于照明的LED光源的调制带宽很低，只有几MHz，限制了基于LED光源的可见光通信的信息传输容量和速度。为构建高带宽LED，研究影响LED调制带宽的因素和机制。设计3组PN结面积分别为200

m×800

m，300

m×900

m和300

m×1 200

m的LED芯片并倒装封装成LED器件，测试这3组器件的光电特性和调制带宽，并比较3组样品的电容曲线，分析调制带宽的主要影响因素之一——电容对LED器件的影响机制。实验结果表明：PN结面积为200

m×800

m的LED器件具有最小电容，且具有最高的49.9 MHz的-3 dB调制带宽。由于封装、测试电路等引起寄生电容对LED器件调制带宽有重要影响，通过优化器件倒装结构、LED驱动电路等方法可以大幅度减少测试系统的寄生电容，提高LED器件的调制带宽。

Abstract

Commercial Light-Emitting Diodes (LEDs) exhibit a -3 dB modulation bandwidth of only several MHz

which severely affects the information capacity and transmission in visible light communication. In this study

to fabricate an LED with high bandwidth

the influencing factors and mechanism of the modulation bandwidth of an LED device were investigated. Three LED chips with PN junction areas of 200

m×800

300

m×900

and 300

m×1 200

m were designed and fabricated. By analyzing the photoelectric and modulation characteristics of the three LEDs

the relationship between the PN junction area and the modulation bandwidth was determined. Then

the capacitance-voltage curves of the three samples were compared

and the influence of the capacitance on the modulation bandwidth was analyzed. The results indicate that the LED with a PN junction area of 200

m×800

m exhibits the minimum capacitance

resulting in the maximum -3 dB bandwidth of 49.9 MHz among the three LEDs. This demonstrates that the parasitic capacitance caused by package

LED drive circuits

etc.

has a significant effect on the modulation bandwidth of LEDs. Thus

LED devices with high bandwidth can be fabricated by decreasing the parasitic capacitance of the LED.

关键词

Keywords

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