王宏亮,宋娟,冯德全,等. 应用于特殊环境的光纤光栅温度压力传感器 [J]. 光学 精密工程, 2011, 19(3):545-550. WANG H L,SONG J,FENG D Q, et al.. High temperature-pressure FBG sensor applied to special environments [J]. Opt. Precision Eng., 2011,19(3): 545-550. (in Chinese)[2] 阙瑞义,朱荣,刘鹏,等. 组合热膜式流速矢量传感器 [J]. 光学 精密工程, 2011, 19 (1):103-109. QUE R Y,ZHU R,LIU P,et al.. Combined hot-film anemometers for measuring flow speed vectors[J]. Opt. Precision Eng., 2011, 19(1): 103-109. (in Chinese)[3] 关荣锋. MEMS机油压力传感器可靠性研究 [J]. 微纳电子技术,2007,7(8):176-202 GUAN R F. Research on the reliability of MEMS oil pressure sensor [J]. Micronano Electronic Technology, 2007, 7(8):176-202.(in Chinese)[4] TSUNG L C, CHEN H C, CHUN T L, et al.. Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor [J]. Sensors and Actuators A: Physical, 2009, 152(1): 29-38.[5] LIN H, STEVENSON J T M, GUNDLACH A M, et al.. Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices[J]. Microelectronic Engineering, 2008, 85(5-6):1059-1061.[6] YOZO K, AKIO Y. Optimum design considerations for silicon piezoresistive pressure sensors [J]. Sensors and Actuators A: Physical, 1997, 62:539-542.[7] LIN L W, HUEY C C, YEN W L. A Simulation Program for the Sensitivity and Linearity of Piezoresistive Pressure Sensors [J]. Journal of Micro Electromechanical Systems, 1999, 8(4):514-522.[8] HERMANN S, KARL K. A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges [J]. IEEE Transactions on Electron Devices, 1993, 40(10):1754-1759.[9] 修显武.扩嫁基区晶体管负阻效应的研究. 山东:山东师范大学,2003. XIU X W. Investigation of negative resistance in ga-diffusion transistor Shandong: Shandong Normal University, 2003.(in Chinese)[10] ALVIN B, WOO T P, JOSEPH R M, et al.. Review: semiconductor piezoresistance for microsystems [J]. Proceedings of the IEEE, 2009, 97(3):513-552.